News

Applied Materials Inc. has recently introduced the VeritySEM®10 Critical Dimension Scanning Electron Microscope (CD-SEM) measurement system. This advanced electron beam measurement tool is specifically designed to measure the critical dimensions of semiconductor devices using EUV and emerging High-NA EUV lithography technology, effectively reducing the cost of lithography processes.

Compared to traditional CD-SEM, the VeritySEM®10 CD-SEM measurement system can achieve twice the resolution at lower energy and improve scanning speed by 30%. The device's leading resolution and scanning rate improvements enhance control of EUV and High-NA EUV lithography and etching processes, helping electronic components manufacturers to accelerate process development and maximize production yields.

The VeritySEM®10 is a breakthrough in CD-SEM technology that addresses the metrology challenges posed by major technology changes that will shape the industry in the coming years. This device's unique combination of low landing energy, high resolution, and faster imaging speeds paves the way for High-NA EUV, Gate-All-Around transistors, and high-density 3D NAND, making it an essential tool for electronic components distributors who want to stay ahead of the curve.